switchmode series npn silicon power darlington transistors with base-emitter speedup diode the mj10015 and mj10016 darlington transistors are designed for highvoltage, highspeed, power switching in inductive circuits where fall time is critical. they are particularly suited for lineoperated switchmode applications such as: ? switching regulators ? motor controls ? inverters ? solenoid and relay drivers ? fast turnoff times 1.0 m s (max) inductive crossover time e 20 amps 2.5 m s (max) inductive storage time e 20 amps ? operating temperature range 65 to +200 c ? performance specified for reversed biased soa with inductive load switching times with inductive loads saturation voltages leakage currents ????????????????????????????????? ????????????????????????????????? maximum ratings ???????????????? ???????????????? rating ?????? ?????? symbol ????? ????? mj10015 ?????? ?????? mj10016 ???? ???? unit ???????????????? ???????????????? collectoremitter voltage ?????? ?????? v ceo ????? ????? 400 ?????? ?????? 500 ???? ???? vdc ???????????????? ???????????????? collectoremitter voltage ?????? ?????? v cev ????? ????? 600 ?????? ?????? 700 ???? ???? vdc ???????????????? ???????????????? emitter base voltage ?????? ?????? v eb ?????????? ?????????? 8.0 ???? ???? vdc ???????????????? ? ?????????????? ? ???????????????? collector current e continuous e peak (1) ?????? ? ???? ? ?????? i c i cm ?????????? ? ???????? ? ?????????? 50 75 ???? ? ?? ? ???? adc ???????????????? ???????????????? base current e continuous e peak (1) ?????? ?????? i b i bm ?????????? ?????????? 10 15 ???? ???? adc ???????????????? ? ?????????????? ? ? ?????????????? ? ???????????????? total power dissipation @ t c = 25 c @ t c = 100 c derate above 25 c ?????? ? ???? ? ? ???? ? ?????? p d ?????????? ? ???????? ? ? ???????? ? ?????????? 250 143 1.43 ???? ? ?? ? ? ?? ? ???? watts w/ c ???????????????? ???????????????? operating and storage junction temperature range ?????? ?????? t j , t stg ?????????? ?????????? 65 to +200 ???? ???? c ????????????????????????????????? ????????????????????????????????? thermal characteristics ???????????????? ???????????????? characteristic ?????? ?????? symbol ?????????? ?????????? max ???? ???? unit ???????????????? ???????????????? thermal resistance, junction to case ?????? ?????? r q jc ?????????? ?????????? 0.7 ???? ???? c/w ???????????????? ? ?????????????? ? ???????????????? maximum lead temperature for soldering purposes: 1/8 from case for 5 seconds ?????? ? ???? ? ?????? t l ?????????? ? ???????? ? ?????????? 275 ???? ? ?? ? ???? c (1) pulse test: pulse width = 5 ms, duty cycle 10%. on semiconductor ? semiconductor components industries, llc, 2001 march, 2001 rev. 3 1 publication order number: mj10015/d mj10015 mj10016 50 ampere npn silicon power darlington transistors 400 and 500 volts 250 watts case 19705 to204ae type (to3 type) 50 8
mj10015 mj10016 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????? ??????????????????? characteristic ????? ????? symbol ???? ???? min ??? ??? typ ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics (1) ??????????????????? ? ????????????????? ? ??????????????????? collectoremitter sustaining voltage (table 1) (i c = 100 ma, i b = 0, v clamp = rated v ceo ) mj10015 mj10016 ????? ? ??? ? ????? v ceo(sus) ???? ? ?? ? ???? 400 500 ??? ? ? ? ??? e e ???? ? ?? ? ???? e e ??? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ??????????????????? collector cutoff current (v cev = rated value, v be(off) = 1.5 vdc) ????? ? ??? ? ????? i cev ???? ? ?? ? ???? e ??? ? ? ? ??? e ???? ? ?? ? ???? 0.25 ??? ? ? ? ??? madc ??????????????????? ? ????????????????? ? ??????????????????? emitter cutoff current (v eb = 2.0 vdc, i c = 0) ????? ? ??? ? ????? i ebo ???? ? ?? ? ???? e ??? ? ? ? ??? e ???? ? ?? ? ???? 350 ??? ? ? ? ??? madc ????????????????????????????????? ????????????????????????????????? second breakdown ??????????????????? ??????????????????? second breakdown collector current with base forward biased ????? ????? i s/b ????????? ????????? see figure 7 ??? ??? ??????????????????? ??????????????????? clamped inductive soa with base reverse biased ????? ????? rbsoa ????????? ????????? see figure 8 ??? ??? ????????????????????????????????? ????????????????????????????????? on characteristics (1) ??????????????????? ? ????????????????? ? ??????????????????? dc current gain (i c = 20 adc, v ce = 5.0 vdc) (i c = 40 adc, v ce = 5.0 vdc) ????? ? ??? ? ????? h fe ???? ? ?? ? ???? 25 10 ??? ? ? ? ??? e e ???? ? ?? ? ???? e e ??? ? ? ? ??? e ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? collectoremitter saturation voltage (i c = 20 adc, i b = 1.0 adc) (i c = 50 adc, i b = 10 adc) ????? ? ??? ? ? ??? ? ????? v ce(sat) ???? ? ?? ? ? ?? ? ???? e e ??? ? ? ? ? ? ? ??? e e ???? ? ?? ? ? ?? ? ???? 2.2 5.0 ??? ? ? ? ? ? ? ??? vdc ??????????????????? ??????????????????? baseemitter saturation voltage (i c = 20 adc, i b = 1.0 adc) ????? ????? v be(sat) ???? ???? e ??? ??? e ???? ???? 2.75 ??? ??? vdc ??????????????????? ? ????????????????? ? ??????????????????? diode forward voltage (2) (i f = 20 adc) ????? ? ??? ? ????? v f ???? ? ?? ? ???? e ??? ? ? ? ??? 2.5 ???? ? ?? ? ???? 5.0 ??? ? ? ? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristic ??????????????????? ??????????????????? output capacitance (v cb = 10 vdc, i e = 0, f test = 100 khz) ????? ????? c ob ???? ???? e ??? ??? e ???? ???? 750 ??? ??? pf ????????????????????????????????? ????????????????????????????????? switching characteristics ????????????????????????????????? ????????????????????????????????? resistive load (table 1) ?????? ?????? delay time ?????????????? ?????????????? ????? ????? t d ???? ???? e ??? ??? 0.14 ???? ???? 0.3 ??? ??? m s ?????? ?????? rise time ?????????????? ?????????????? (v cc = 250 vdc, i c = 20 a, i b1 =10adc v be( ff) = 5 vdc t =25 m s ????? ????? t r ???? ???? e ??? ??? 0.3 ???? ???? 1.0 ??? ??? m s ?????? ?????? storage time ?????????????? ?????????????? i b1 = 1.0 adc, v be(off) = 5 vdc, t p = 25 m s duty cycle 2%). ????? ????? t s ???? ???? e ??? ??? 0.8 ???? ???? 2.5 ??? ??? m s ?????? ?????? fall time ?????????????? ?????????????? duty cycle 2%). ????? ????? t f ???? ???? e ??? ??? 0.3 ???? ???? 1.0 ??? ??? m s ????????????????????????????????? ????????????????????????????????? inductive load, clamped (table 1) ?????? ?????? storage time ?????????????? ?????????????? (i c = 20 a(pk), v clamp = 250 v, i b1 = 1.0 a, ????? ????? t sv ???? ???? e ??? ??? 1.0 ???? ???? 2.5 ??? ??? m s ?????? ?????? crossover time ?????????????? ?????????????? (i c 20 a( k) , v clam 250 v , i b1 1 . 0 a , v be(off) = 5.0 vdc) ????? ????? t c ???? ???? e ??? ??? 0.36 ???? ???? 1.0 ??? ??? m s (1) pulse test: pulse width = 300 m s, duty cycle 2%. (2) the internal collectortoemitter diode can eliminate the need for an external diode to clamp inductive loads. (2) tests have shown that the forward recovery voltage (v f ) of this diode is comparable to that of typical fast recovery rectifiers.
mj10015 mj10016 http://onsemi.com 3 v, voltage (volts) -0.2 v be , base-emitter voltage (volts) 0 2.8 i c , collector current (amp) 2.4 2.0 1.6 1.2 i c /i b = 10 100 0.5 figure 1. dc current gain i c , collector current (amps) 5.0 1.0 2.0 5.0 10 20 50 50 10 20 figure 2. collectoremitter saturation voltage 0.5 i c , collector current (amp) 0.4 2.0 5.0 1.2 0.8 h fe , dc current gain t c = 25 c v ce = 5.0 v 10 20 50 figure 3. baseemitter saturation voltage +0.2 0.5 1.0 2.0 10 50 20 5.0 figure 4. collector cutoff region 2.4 2.0 1.6 figure 5. output capacitance 1500 0.4 v r , reverse voltage (volts) 100 10 1000 100 400 c 200 forward 0.8 v ce = 250 v 75 c 100 c reverse 25 c t j = 125 c 1.0 4.0 40 300 500 t j = 150 c t j = 25 c 10 4 10 3 10 2 10 1 10 0 10 -1 , output capacitance (pf) ob 1.0 , collector current ( a) m i c v, voltage (volts) i c /i b = 10 t j = 150 c t j = 25 c +0.4 +0.6 +0.8 t j = 25 c typical characteristics
mj10015 mj10016 http://onsemi.com 4 table 1. test conditions for dynamic performance v ceo(sus) v cex and inductive switching resistive switching input conditions circuit values test circuits 20 w 1 0 pw varied to attain i c = 100 ma l coil = 10 mh, v cc = 10 v r coil = 0.7 w v clamp = v ceo(sus) l coil = 180 m h r coil = 0.05 w v cc = 20 v v cc = 250 v r l = 12.5 w pulse width = 25 m s inductive test circuit turnon time i b1 adjusted to obtain the forced h fe desired turnoff time use inductive switching driver as the input to the resistive test circuit. t 1 adjusted to obtain i c test equipment scope e tektronix 475 or equivalent resistive test circuit output waveforms 2 i b1 1 2 5 v inductive test circuit 1 input 2 r coil l coil v cc v clamp rs = 0.1 w 1n4937 or equivalent tut see above for detailed conditions 1 input 2 r coil l coil v cc v clamp rs = 0.1 w 1n4937 or equivalent tut see above for detailed conditions t 1 i c(pk) t f clamped t f t t t 2 time v ce or v clamp 1 2 tut r l v cc t 1 l coil (i c pk ) v cc t 2 l coil (i c pk ) v clamp *adjust v such that v be(off) = 5 v except as required for rbsoa (figure 8). figure 6. inductive switching measurements t rv time i c v ce 90% i b1 t sv i c pk v clamp 90% v clamp 90% i c 10% v clamp 10% i c pk 2% i c i b t fi t ti t c switching times note in resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. however, for inductive loads which are common to switchmode power supplies and hammer drivers, current and voltage waveforms are not in phase. therefore, separate measurements must be made on each waveform to determine the total switching time. for this reason, the following new terms have been defined. t sv = voltage storage time, 90% i b1 to 10% v clamp t rv = voltage rise time, 10 90% v clamp t fi = current fall time, 90 10% i c t ti = current tail, 10 2% i c t c = crossover time, 10% v clamp to 10% i c for the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from an222: p swt = 1/2 v cc i c (t c ) f in general, t rv + t fi t c . however, at lower test currents this relationship may not be valid. as is common with most switching transistors, resistive switching is specified and has become a benchmark for designers. however, for designers of high frequency converter circuits, the user oriented specifications which make this a aswitchmodeo transistor are the inductive switching speeds (t c and t sv ) which are guaranteed.
mj10015 mj10016 http://onsemi.com 5 the safe operating area figures shown in figures 7 and 8 are specified ratings for these devices under the test conditions shown. 1.0 figure 7. forward bias safe operating area v ce , collector-emitter voltage (volts) 5.0 50 0.005 50 20 2.0 1.0 5.0 0.5 100 0 10 100 0 figure 8. reverse bias switching safe operating area v ce , collector-emitter voltage (volts) 0 200 300 40 20 50 400 t c = 25 c i c , collector current (amps) 0.1 200 dc i c , collector current (amps) 2.0 20 500 30 10 0.2 0.02 0.01 500 v be(off) = 5.0 v t c = 25 c mj10015 0.05 10 turn-off load line boundary for mj10016 the locus for mj10015 is 100 v less 10 m s i c i b1 10 bonding wire limit thermal limit (single pulse) second breakdown limit mj10016 100 safe operating area information forward bias there are two iimitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 7 is based on t c = 25 c; t j(pk) is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% but must be derated when t c 25 c. second breakdown limitations do not derate the same as thermal limitations. allowable current at the voltages shown on figure 7 may be found at any case temperature by using the appropriate curve on figure 9. reverse bias for inductive loads, high voltage and high current must be sustained simultaneously during turnoff, in most cases, with the base to emitter junction reverse biased. under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. this can be accomplished by several means such as active clamping, rc snubbing, load line shaping, etc. the safe level for these devices is specified as reverse bias safe operating area and represents the voltagecurrent condition allowable during reverse biased turnoff. this rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. figure 8 gives the complete rbsoa characteristics. 0 figure 9. power derating t c , case temperature ( c) 0 40 80 80 40 100 120 power derating factor (%) 160 200 60 20 thermal derating v be(off) , reverse base voltage (volts) 12 34 5 6 10 8 6 5 4 3 2 0 , base current (amp) i b2(pk) 0 see table 1 for conditions, figure 6 for waveshape. 9 7 1 78 figure 10. typical reverse base current versus v be(off) with no external base resistance i c = 20 a forward bias second breakdown derating
mj10015 mj10016 http://onsemi.com 6 package dimensions case 197a05 issue j to204ae (to3) notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. dim min max min max millimeters inches a 1.530 ref 38.86 ref b 0.990 1.050 25.15 26.67 c 0.250 0.335 6.35 8.51 d 0.057 0.063 1.45 1.60 e 0.060 0.070 1.53 1.77 g 0.430 bsc 10.92 bsc h 0.215 bsc 5.46 bsc k 0.440 0.480 11.18 12.19 l 0.665 bsc 16.89 bsc n 0.760 0.830 19.31 21.08 q 0.151 0.165 3.84 4.19 u 1.187 bsc 30.15 bsc v 0.131 0.188 3.33 4.77 a n e c k t seating plane 2 pl d m q m 0.30 (0.012) y m t m y m 0.25 (0.010) t q y 2 1 l g b v h u
mj10015 mj10016 http://onsemi.com 7 notes
mj10015 mj10016 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 13036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mj10015/d switchmode is a trademark of semiconductor components industries, llc. north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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